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| SMD Super Fast Recovery Rectifier COMCHIP www.comchiptech.com CSFL101 Thru CSFL105 Reverse Voltage: 50 - 600 Volts Forward Current: 1.0 Amp Features DO-213AB (Plastic Melf) Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0 Super fast recovery time 35-50 nS Built-in strain relief Low forward voltage drop 0.022(0.55) Max. 0.205(5.2) 0.195(4.8) Mechanical Data Case: DO-213AB molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.116 gram 0.105(2.67) 0.095(2.40) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) Operating Junction Temperature Storage Temperature Symbol VRRM VDC VRMS IFSM CSFL 101 50 50 35 CSFL 102 100 100 70 CSFL 103 200 200 140 CSFL 104 400 400 280 CSFL 105 600 600 420 Unit V V V A 30 Io VF Trr IR R 0.95 35 1.0 1.3 1.5 50 A V nS uA 5.0 100 50 -55 to +150 -55 to +150 JA C/W C C Tj TSTG Note 1: Thermal resistance from junction to ambient. MDS0210016B Page 1 SMD Super Fast Recovery Rectifier COMCHIP www.comchiptech.com Rating and Characteristic Curves (CSFL101 Thru CSFL105) Fig. 1 - Reverse Characteristics 1000 Tj=125 C 10 Fig.2 - Forward Characteristics CSFL101-103 Forward current ( A ) 1.0 100 Tj=75 C CSFL104 0.1 10 CSFL105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 1.0 Tj=25 C 0.1 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage (%) 0.001 0 0.2 0. 4 0.6 0.8 1.0 1.2 1.4 Forward Voltage (V) Fig. 3 - Junction Capacitance 14 Fig. 4 - Non Repetitive Forward Surge Current Peak surge Forward Current ( A ) 30 8.3mS Single Half Sine Wave JEDEC methode 12 f=1.0MHz Vsig=50mVp-p Junction Capacitance (pF) 25 20 15 Tj=25 C 10 5 0 10 8 6 4 2 0 Tj=25 C 0.1 1.0 10 100 1 5 10 50 1 00 Reverse Voltage (V) Fig. 5 - Test Circuit Di agram and Reverse Recovery Time Characteristics 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A Fig. 6 - Current Derating Curve 1.4 Average Forward Current ( A ) trr | | | | | | | | 1.2 1.0 0.8 0.6 0.4 0.2 00 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 -0.25A Single Phase Half Wave 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 25 50 75 100 125 150 175 Ambient Temperature ( C) MDS0210016B Page 2 |
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